N. V. Kryzhanovskaya, M. V. Maksimov, S. A. Blokhin, M. A. Bobrov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, A. A. Lipovskii, È. I. Moiseev, Yu. V. Kudashova, D. A. Livshits, V. M. Ustinov, A. E. Zhukov, “Microdisk injection lasers for the 1.27-<nobr>$\mu$</nobr>m spectral range”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 3,Pages <nobr>393

This article is cited in 13 papers

Semiconductor physics

Microdisk injection lasers for the 1.27-$\mu$m spectral range

N. V. Kryzhanovskaya^a, M. V. Maksimov^ab, S. A. Blokhin^b, M. A. Bobrov^bc, M. M. Kulagina^b, S. I. Troshkov^b, Yu. M. Zadiranov^b, A. A. Lipovskii^ca, È. I. Moiseev^a, Yu. V. Kudashova^a, D. A. Livshits^d, V. M. Ustinov^b, A. E. Zhukov^ace

^a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Ioffe Institute, St. Petersburg
^c Peter the Great St. Petersburg Polytechnic University
^d Innolume GmbH, Dortmund, Germany
^e Saint-Petersburg Scientific Center, Russian Academy of Sciences

Abstract: Microdisk injection lasers on GaAs substrates, with a minimum diameter of 15 $\mu$m and an active region based on InAs/InGaAs quantum dots, are fabricated. The lasers operate in the continuous-wave mode at room temperature without external cooling. The lasing wavelength is around 1.27 $\mu$m at a minimum threshold current of 1.6 mA. The specific thermal resistance is estimated to be 5 $\times$ 10$^{-3\circ}$С cm$^{2}$/W.

Keywords: GaAs, Quantum Well, Pump Current, Whisper Gallery Mode, Threshold Current Density.

Received: 30.06.2015
Accepted: 08.07.2015