This article is cited in
5 papers
Semiconductor physics
High-voltage silicon-carbide thyristor with an $n$-type blocking base
M. E. Levinshteĭna,
T. T. Ėnatsakanovb,
S. N. Yurkovb,
A. G. Tandoevb,
Sei-Hyung Ryuc,
J. W. Palmourc a Ioffe Institute, St. Petersburg
b Russian Electrotechnical Institute Named after V. I. Lenin, Moscow, Russia
c Cree Inc., USA
Abstract:
The possibility of creating a high-voltage SiC thyristor with an
$n$-type blocking base is analyzed. It is shown that a thyristor structure fabricated as an “analog” of a modern thyristor structure with a
$p$-type blocking base, i.e., with the same layer thicknesses and replaced doping types (donors instead of acceptors, and vice versa), cannot be turned-on at any input signal level. At room temperature, a structure with an
$n$-type blocking base and acceptable parameters can only be obtained in the absence of a stop layer. In this case, however, the maximum blocking voltage is approximately two times lower than that for a thyristor with a
$p$-type blocking base of the same thickness. In the presence of a stop layer, a portion of an
$S$-shaped negative differential resistance appears at room temperature in the forward currentvoltage characteristic of the thyristor with an
$n$-type blocking base. This effect is due to the violation and subsequent restoration of neutrality. At ambient temperatures of
$T\ge$ 150
$^\circ$C, the currentvoltage characteristics of the thyristor with the
$n$-type blocking base become quite acceptable even in the presence of a stop layer.
Keywords:
Doping Level, Blocking Base, Carrier Lifetime, Voltage Characteristic, Minority Carrier Lifetime. Received: 14.07.2015
Accepted: 08.09.2015