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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 2, Pages 154–157 (Mi phts6529)

This article is cited in 3 papers

Electronic properties of semiconductors

Compositional dependence of the band gap of (CuIn$_{5}$S$_{8}$)$_{1-x}$ $\cdot$ (FeIn$_{2}$S$_{4}$)$_{x}$ alloys

I. V. Bondar', I. A. Viktorov, M. A. Zhafar, S. A. Pauliukavets

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: The transmittance spectra of single-crystal CuIn$_{5}$S$_{8}$ and FeIn$_{2}$S$_{4}$ ternary compounds and (CuIn$_{5}$S$_{8}$)$_{1-x}$ $\cdot$ (FeIn$_{2}$S$_{4}$)$_{x}$ alloys grown by planar crystallization of the melt are studied in the region of the fundamental-absorption edge. From the experimentally recorded spectra, the band gap of the compounds and their alloys is determined, and the compositional dependence of the band gap is constructed. It is established that the band gap nonlinearly varies with the composition parameter $x$ (with a maximum at the average content $x$) and can be described by a quadratic dependence.

Keywords: Transmittance Spectrum, Ternary Compound, Composition Parameter, Compositional Dependence, Equimolar Composition.

Received: 09.06.2015
Accepted: 01.07.2015


 English version:
Semiconductors, 2016, 50:2, 154–157

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