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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 2, Pages 212–217 (Mi phts6540)

This article is cited in 3 papers

Amorphous, glassy, organic semiconductors

Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters

V. A. Terekhova, E. I. Terukovb, Yu. K. Undalovb, E. V. Parinovaa, D. E. Spirina, P. V. Seredina, D. A. Minakova, È. P. Domashevskayaa

a Voronezh State University
b Ioffe Institute, St. Petersburg

Abstract: The phase composition and optical properties of hydrogenated amorphous films of silicon suboxide ($a$-SiO$_x$ :H) with silicon nanoclusters are studied. Ultrasoft X-ray emission spectroscopy show that silicon- suboxide films with various oxidation states and various amorphous silicon-cluster contents can be grown using dc discharge modulation. In films with an ncl-Si content of $\sim$50%, the optical-absorption edge is observed, whose extrapolation yields an optical band gap estimate of $\sim$3.2–3.3 eV. In the visible region, rather intense photoluminescence bands are observed, whose peak positions indicate the formation of silicon nanoclusters 2.5–4.7 nm in size in these films, depending on the film composition.

Keywords: Amorphous Film, Interference Structure, Silicon Nanoclusters, Silicon Suboxide, Local Partial Density.

Received: 28.05.2015
Accepted: 09.06.2015


 English version:
Semiconductors, 2016, 50:2, 212–216

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