N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, P. N. Aruev, V. V. Zabrodskii, E. I. Shek, K. F. Shtel'makh, A. N. Mikhaylov, D. I. Tetelbaum, “Si:Si LEDs with room-temperature dislocation-related luminescence”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2,Pages <nobr>241

This article is cited in 11 papers

Semiconductor physics

Si:Si LEDs with room-temperature dislocation-related luminescence

N. A. Sobolev^a, A. E. Kalyadin^a, M. V. Konovalov^a, P. N. Aruev^a, V. V. Zabrodskii^a, E. I. Shek^a, K. F. Shtel'makh^ab, A. N. Mikhaylov^c, D. I. Tetelbaum^c

^a Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c Lobachevsky State University of Nizhny Novgorod

Abstract: Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on $n$-Si. In LEDs based on $p$-Si, the EL is quenched at temperatures higher than 220 K. The EL-excitation efficiencies are measured for the $D$1 line at room temperature and the $D$1 and $D$4 lines at liquid-nitrogen temperature.

Keywords: Polycrystalline Silicon, Solid State Phenom, Peak Energy Position, Direct Wafer Bonding, Pump Current Density.

Received: 04.06.2015
Accepted: 12.06.2015