V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul'nikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov, “Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2,Pages <nobr>245

This article is cited in 24 papers

Semiconductor physics

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

V. G. Tikhomirov^ab, V. E. Zemlyakov^bc, V. V. Volkov^b, Ya. M. Parnes^b, V. N. V’yuginov^b, V. V. Lundin^de, A. V. Sakharov^de, E. E. Zavarin^ed, A. F. Tsatsul'nikov^ed, N. A. Cherkashin^f, M. N. Mizerov^d, V. M. Ustinov^e

^a Saint Petersburg Electrotechnical University "LETI"
^b ZAO Svetlana-Elektronpribor, St. Petersburg
^c National Research University of Electronic Technology
^d Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^e Ioffe Institute, St. Petersburg
^f CEMES-CNRS – Université de Toulouse, Toulouse, France

Abstract: The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.

Keywords: Sapphire Substrate, Joint Stock Company, Specific Output Power, AlGaN Barrier Layer, Microwave Transistor.

Received: 11.06.2015
Accepted: 17.06.2015