Electroluminescence properties of LEDs based on electron-irradiated $p$-Si

The electroluminescence (EL) in $n^{+}$–$p$–$p^{+}$ light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical-vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.