D. S. Korolev, A. N. Mikhaylov, A. I. Belov, V. K. Vasil'ev, D. V. Guseinov, E. V. Okulich, A. A. Shemukhin, S. I. Surodin, D. E. Nikolichev, A. V. Nezhdanov, A. V. Pirogov, D. A. Pavlov, D. I. Tetelbaum, “Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2,Pages <nobr>274

This article is cited in 7 papers

Manufacturing, processing, testing of materials and structures

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

D. S. Korolev^a, A. N. Mikhaylov^a, A. I. Belov^a, V. K. Vasil'ev^a, D. V. Guseinov^a, E. V. Okulich^a, A. A. Shemukhin^b, S. I. Surodin^a, D. E. Nikolichev^a, A. V. Nezhdanov^a, A. V. Pirogov^a, D. A. Pavlov^a, D. I. Tetelbaum^a

^a Lobachevsky State University of Nizhny Novgorod
^b Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics

Abstract: The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing $\sim$25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

Keywords: Gallium, Annealing Atmosphere, Inverse Sequence, SRIM Software, SRIM Calculation.

Received: 28.05.2015
Accepted: 15.06.2015