Simulation of the $\beta$-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 $\beta$ source

The prospects of $\beta$ voltaics as electric-power sources for semiconductor circuits are considered. Experimental studies show that charging of the surface and a decrease in the electrovoltaic power are important. Simulation of the $\beta$-voltaic effect induced by electrons from a nickel-63 source on silicon pin structures is performed; it is shown that the coefficient of the collection of generated charge carriers can be as high as 13%. The dose dependences of the performance efficiency of silicon $\beta$-voltaic structures are determined for the case of irradiation with $\alpha$ particles and $\gamma$-ray photons; it is shown that 1.3 $\times$ 10$^{14}$ and 10$^{20}$ cm$^{-2}$, respectively, are the threshold doses, above which a rapid decrease in efficiency occurs. The optimal parameters of microchannel structures in $\beta$-voltaic electronics, in which the width of the channels and the distance between them correspond to 3 and 10 $\mu$m, are determined.