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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 1, Pages 51–54 (Mi phts6562)

This article is cited in 5 papers

Surface, interfaces, thin films

Optical properties of PbS thin films

O. R. Akhmedova, M. G. Huseynaliyeva, N. A. Abdullaevb, N. M. Abdullaevb, S. S. Babaevb, N. A. Kasumovb

a National Academy of Azerbaijan, Nakhichevan Branch, Nakhichevan, Azerbaijan
b Abdullaev Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

Abstract: The complex dielectric function of PbS thin films is studied by spectroscopic ellipsometry in the spectral range from 0.74 to 6.45 eV at a temperature of 293 K. The critical energies are determined to be $E_1$ = 3.53 eV and $E_2$ = 4.57 eV. For both energy regions, the best fit is attained at the critical point 2D ($m$ = 0). In addition, the Raman spectra and the optical-absorption spectra of PbS thin films are studied. From the dependence of the quantity $(\alpha h\nu)^{2}$ on the photon energy $h\nu$, the band gap is established at $E_g$ = 0.37 eV.

Received: 17.03.2015
Accepted: 26.03.2015


 English version:
Semiconductors, 2016, 50:1, 50–53

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