Photodetectors based on CuInS$_2$

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS$_2$ and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 $\times$ 10$^{16}$ cm$^{-2}$.