M. G. Mynbaeva, A. A. Lavrent'ev, K. J. Mynbaev, “Formation of graphite/SiC structures by the thermal decomposition of silicon carbide”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 1,Pages <nobr>138

This article is cited in 7 papers

Manufacturing, processing, testing of materials and structures

Formation of graphite/SiC structures by the thermal decomposition of silicon carbide

M. G. Mynbaeva^ab, A. A. Lavrent'ev^a, K. J. Mynbaev^ba

^a Ioffe Institute, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.

Received: 06.05.2015
Accepted: 18.05.2015