A. G. AL-Shatravi, H. Hassan, S. M. Abdulalmuhsin, A. H. Al-Khursan, “TlGaN quantum-dot photodetectors”, Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 3,Page 282

This article is cited in 4 papers

Semiconductor physics

TlGaN quantum-dot photodetectors

A. G. AL-Shatravi^a, H. Hassan^b, S. M. Abdulalmuhsin^a, A. H. Al-Khursan^b

^a Physics Department, College of Science, University of Thi-Qar, Nassiriyah, Iraq
^b Nassiriya Nanotechnology Research Laboratory (NNRL), College of Science, University of Thi-Qar, Nassiriyah, Iraq

Abstract: Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga$_8$Tl$_2$N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.

Keywords: quantum dot, thallium-based structures, quantum efficiency, absorption spectrum.

Received: 28.09.2020
Revised: 28.09.2020
Accepted: 03.11.2020

Language: English