A. S. Kurdyubov, B. F. Gribakin, A. V. Mikhailov, A. V. Trifonov, Yu. P. Efimov, S. A. Eliseev, V. A. Lovtsyus, I. V. Ignatiev, “Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 11,Page 1261

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Excitons in Nanostructures

Energy spectrum in a shallow GaAs/AlGaAs quantum well probed by spectroscopy of nonradiative broadening of exciton resonances

A. S. Kurdyubov^a, B. F. Gribakin^a, A. V. Mikhailov^a, A. V. Trifonov^a, Yu. P. Efimov^b, S. A. Eliseev^b, V. A. Lovtsyus^b, I. V. Ignatiev^a

^a Spin Optics Laboratory, St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia
^b Resourse Center "Nanohotonics", St. Petersburg State University, 198504 St. Petersburg, Petrodvorets, Russia

Abstract: The energy spectrum of the exciton and carrier states in a shallow GaAs/AlGaAs quantum well is experimentally studied by means of the spectroscopy of the nonradiative broadening of exciton resonances and the spectroscopy of the photoluminescence excitation. The observed peculiarities of the spectra are treated using the numerical solution of the one-dimensional Schrödinger equation for free carriers and three-dimensional equation for excitons in the quantum well. The conduction and valence band offsets in the shallow GaAs quantum well are determined.

Keywords: exciton spectroscopy; GaAs/AlGaAs quantum well; nonradiative broadening.

Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020

Language: English