M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov, M. A. Kaliteevski, “Calculation of the Ga+ FIB ion dose distribution by SEM image”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12,Page 1390

This article is cited in 5 papers

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Calculation of the Ga+ FIB ion dose distribution by SEM image

M. I. Mitrofanov^a, G. V. Voznyuk^a, S. N. Rodin^a, W. V. Lundin^a, V. P. Evtikhiev^a, A. F. Tsatsulnikov^b, M. A. Kaliteevski^c

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b SHM R&E Center, Russian Academy of Sciences, 199034 St. Petersburg, Russia
^c ITMO University, 197101 St. Petersburg, Russia

Abstract: A new approach for calculating the ion dose spatial distribution of the focused ion beam is proposed. The approach is based on the analysis of the secondary electron microscopy image of the area irradiated by the focused ion beam.

Keywords: FIB, focused ion beam distribution, ion beam lithography.

Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020

Language: English