P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxide oxidized at different pressures”, Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12,Page 1395

This article is cited in 2 papers

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Electronic structure of molybdenum oxide oxidized at different pressures

P. A. Dementev^a, E. V. Ivanova^a, M. N. Lapushkin^a, D. A. Smirnov^b, S. N. Timoshnev^c

^a Ioffe Institute, 194021 St. Petersburg, 194021 Russia
^b Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062 Dresden, Germany
^c Alferov University, 194021 St. Petersburg, 194021 Russia

Abstract: Electronic structure of molybdenum oxides obtained by the oxidation of molybdenum at an oxygen pressure of 1 Torr (thin film) and air (thick film) was studied. It was shown that a thick oxide film is formed from MoO$_3$ oxide, and a thin film from a mixture of MoO$_3$ and MoO$_2$ oxides, which is reflected in the form of valence band spectra. Oxygen on the surface belongs both in molybdenum oxide and in the hydroxyl group, which is associated with dissociative adsorption of water during the oxidation of molybdenum in air for a thick film.

Keywords: molybdenum oxide, oxidation, valence band, photoelectron spectroscopy.

Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020

Language: English