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Fizika i Tekhnika Poluprovodnikov, 2020 Volume 54, Issue 12, Page 1400 (Mi phts6699)

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Spin Related Phenomena in Nanostructures

Spin waves interference under excitation by focusing transducers: logic and signal processing

M. Madamia, G. Gubbiottib, Y. V. Khivintsevcd, G. M. Dudkoc, V. K. Sakharovc, A. V. Kozhevnikovc, Y. A. Filimonovcde, A. G. Khitunf

a Dipartimento di Fisica e Geologia, Università di Perugia, via A. Pascoli, I-06123 Perugia, Italy
b Istituto Officina dei Materiali del CNR (CNR-IOM), sede secondaria di Perugia, c/o Dipartimento di Fisica e Geologia, Università di Perugia, I-06123 Perugia, Italy
c Kotelnikov Institute of Radioengineering and Electronics, Saratov Branch, 410005 Saratov, Russia
d Chernyshevsky Saratov State University, 410012 Saratov, Russia
e Yuri Gagarin State Technical University of Saratov, 410054 Saratov, Russia
f University of California-Riverside, Riverside, California, USA 92521

Abstract: Micro-focused Brillouin-Mandelstam light scattering technique and micromagnetic simulations were used to study surface (SSW) and backward volume (BVSW) spin waves (SW) interference under excitation by curvilinear focusing transducers placed oppositely to each other on a top of tangentially magnetized yttrium iron garnet (YIG) film. It is shown that due to anisotropic propagation, the 2D interference patterns for both SSW and BVSW focused beams are nonreciprocal. Due to chromatic aberration and caustics formation of the focusing transducers, the interference pattern of the focused SW beams depends on excitation frequency and is sensitive to local nonuniformities in YIG film. The obtained results demonstrate the possibility to use curvilinear SW focusing transducers for information technologies based on magnonic optics.

Keywords: spin waves interference, spin waves focusing transducer, logic and signal processing.

Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020

Language: English


 English version:
Semiconductors, 2020, 54:12, 1716–1720


© Steklov Math. Inst. of RAS, 2024