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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 1, Pages 3–6 (Mi phts6709)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Surface morphology of AlN layers grown on a nano-structured SiN$_x$/Si(100) template

V. N. Bessolova, E. V. Konenkovaa, S. N. Rodina, A. V. Solomnikovab

a Ioffe Institute, 194021 St. Petersburg, Russia
b Saint Petersburg Electrotechnical University "LETI", 197022 St. Petersburg, Russia

Abstract: The morphology of ALN layers grown by Metalorganic Chemical Vapor Deposition on nano-structured NP-Si(001) substrates coated with SiN$_x$ has been studied using atomic force microscopy. The AlN layers grown on the SiN$_x$/NP-Si(100) template demonstrate a surface roughness 3.8 times less than those obtained on NP-Si(100), and are close to the roughness value for the AlN layer grown on a flat Si(111) substrate. It has been proposed a model to explain the differences in the formation of the surface morphology of AlN layers on the NP-Si(100) substrate and the SiN$_x$/NP-Si(100) template.

Keywords: aluminum nitride, silicon nitride, nano-structured silicon substrate.

UDC: 621.315.592

Received: 07.02.2024
Revised: 28.02.2024
Accepted: 28.02.2024

DOI: 10.61011/FTP.2024.01.57628.6003


 English version:
Semiconductors, 2024, 58:4, 302–305

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© Steklov Math. Inst. of RAS, 2025