RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 1, Pages 28–36 (Mi phts6713)

Semiconductor structures, low-dimensional systems, quantum phenomena

Coherent spin dynamics in the nonuniform ferromagnetic InGaAs/GaAs/$\delta$-Mn structures

S. V. Zaitseva, V. V. Dremovb, V. S. Stoliarovb

a Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Oblast, Russia
b Moscow Institute of Physics and Technology (National Research University), 141700 Dolgoprudnyi, Russia

Abstract: A detailed study of the coherent spin dynamics of photoexcited carriers in a heterostructure with an InGaAs/GaAs quantum well and a $\delta$-Mn-layer separated from the quantum well by a 3–10 nm-thick GaAs spacer indicates its strong non-uniformity in the plane and mesoscopic separation to the regions of carrier localization. Mesoscopic separation with a characteristic scale of $\sim$100–200 nm is also observed using magnetic force microscopy below the Curie temperature of the $\delta$-Mn-layer.

Keywords: coherent spin dynamics, quantum well InGaAs/GaAs, ferromagnetic $\delta$-Mn-layer, mesoscopic separation, fluctuation potential.

Received: 20.01.2024
Revised: 26.02.2024
Accepted: 29.02.2024

DOI: 10.61011/FTP.2024.01.57632.5926


 English version:
Semiconductors, 2024, 58:1, 77–85

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025