RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 2, Pages 96–105 (Mi phts6724)

Semiconductor physics

The effect of the cavity length on the output optical power of semiconductor laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures

P. S. Gavrinaa, A. A. Podoskina, I. V. Shushkanova, I. S. Shashkina, V. A. Kryuchkova, S. O. Slipchenkoa, N. A. Pikhtina, T. A. Bagaeva, M. A. Laduginb, A. A. Marmalyukb, V. A. Simakovb

a Ioffe Institute, St. Petersburg, 194021 St. Petersburg, Russia
b Polyus Research and Development Institute named after M. F. Stel'makh, 117342 Moscow, Russia

Abstract: The effect of laser-thyristor cavity length on the characteristics of the generated laser pulses has been studied. Results show that for pulse durations of approximately $\sim$20–30 ns, achieved with a nominal discharge capacitor of 22 nF, increasing the cavity length from 480 to 980 $\mu$m enables a rise in maximum peak power from 16.6 W to 25.4 W. A further extension of the cavity length to 1950 $\mu$m causes an insignificant decrease in the maximum peak power to 23.7 W due to lower external differential efficiency of the samples at the initial linear region of the light-current curve. However, this extension provides a reduction of optical pulse duration compared to samples of other lengths over the entire supply voltage range.

Keywords: laser-thyristor, semiconductor laser, current switch, pulse laser.

Received: 12.12.2023
Revised: 19.03.2024
Accepted: 19.03.2024

DOI: 10.61011/FTP.2024.02.57876.5843



Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025