Low-voltage current switches based on AlInGaAsP/InP thyristor heterostructures for nanosecond pulsed laser emitters (1.5 $\mu$m)

The study examines current switches based on InP thyristors designed for pulsed 1400–1600 nm laser emitters. The heterostructure of the switch includes an InP transistor section and an upper InP/AlInGaAs/InGaAsP heterodiode, simulating a laser heterostructure. For switch samples with an anode contact size of 200 $\times$ 250 $\mu$m and two control contacts of 200 $\times$ 250 $\mu$m, the ability to generate current pulses with durations of 3–5 ns and amplitudes exceeding 6–8 A at a supply voltage of 16 V was demonstrated. The pulse repetition frequency reached 100 kHz.