Reproducibility of the electrophysical characteristics of the prototype transistor structures based on the graphene–CaF$_2$–Si(111) heterosystem

Statistical distributions of the current have been studied for the set of the prototype transistor structures with a two-dimensional graphene film over the insulating calcium fluoride layer grown by molecular beam epitaxy. Such material combination is new for this field. The obtained characteristics were rather attractive, keeping the spread parameters (such as dispersion of the drain current or of the position of charge neutrality point at the current and voltage scale) within the tolerable limits. The studies in this area are important for development of “two- dimensional” electronics based on transistors whose prototype structures were under consideration in the work.