Study of the structural and optical properties of InGaAs quantum dots

The growth parameters of In$_x$Ga$_{1-x}$As quantum dots grown by molecular-beam epitaxy were tested. It has been shown that a decrease in the indium content in quantum dots structures yields to a decrease in the ground state emission wavelength, with subsequent saturation of the behavior. The use of In$_{0.5}$Ga$_{0.5}$As quantum dots makes it possible to realize effective photoluminescence close to 995 nm at 13 K temperature, with emission inhomogeneous broadening of about 57 meV with unimodal size distribution. The high luminescence efficiency for structures with In$_{0.5}$Ga$_{0.5}$As quantum dots at 300 K temperature has been demonstrated, which makes it possible to use this type of active regions for the fabrication of vertical microcavities to further realize reservoir computing.