The influence of external parameters on the switching process by delayed ionization in a silicon $p^+$–$n$–$n^+$-structure

The new developed technique allows measuring fast-switching processes in semiconductor diodes, which are switched into a conducting state by applying a high-voltage fast-rising pulse together with a high DC voltage. Using this technique, delayed impact ionization was studied in $p^+$–$n$–$n^+$ structures with base thicknesses of about 100 $\mu$m and 410 $\mu$m. It has been experimentally demonstrated that for structures with a thick base, the switching characteristics improve with an increase in both the DC reverse bias and the rise rate of the applied voltage pulse. A voltage rise rate of 42.7 kV/ns has been achieved for a single structure.