RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 7, Pages 349–357 (Mi phts6763)

XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024

Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)

V. G. Mansurova, T. V. Malina, D. D. Bashkatovab, D. S. Milakhinab, K. S. Zhuravleva

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State Technical University, Novosibirsk, Russia

Abstract: A study of the influence of the conditions of silicon nitride crystalline phase formation on the process kinetics as a result of controlled nitridation of the reconstructed (7$\times$7) Si(111) surface at varying substrate temperatures in the range 700–800$^\circ$C has been carried out. From the analysis of the diffraction patterns obtained by the reflection high-energy electron diffraction technique, it is found that the formation kinetics of the two-dimensional (8$\times$8) crystalline phase in the temperature range of 700–800$^\circ$C differs from that of the high-temperature nitridation and exhibits normal activation-reaction behaviour, indicating the presence of an activation barrier. The activation barrier of 0.6 eV associated with the formation heat of a mobile silicon atom from the adatoms of the (7$\times$7) structure involved in the formation of the SiN (8$\times$8) crystalline phase on the ordered silicon (7$\times$7) superstructure has been determined and a kinetic scheme of the process has been proposed.

Keywords: ammonia molecular beam epitaxy (NH$_3$-MBE), nitridation kinetics, crystalline sin (8$\times$8), Si(111) silicon, RHEED.

Received: 19.04.2024
Revised: 20.09.2024
Accepted: 20.09.2024

DOI: 10.61011/FTP.2024.07.59177.6328H



Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025