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Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 7, Pages 365–369 (Mi phts6765)

XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024

Electronic structure of janus layers based on Ti$_{1-y}$Cr$_y$(Se$_{1-x}$S$_x$)$_2$

D. V. Belyaeva, Yu. E. Kovalenkoa, A. A. Titova, V. A. Golyashovbc, O. E. Tereshchenkobc, R. G. Chumakovd, A. N. Titova, T. V. Kuznetsovaae

a Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, Yekaterinburg, Russia
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
c Boreskov Institute of Catalysis SB RAS, Koltsovo, Russia
d National Research Centre "Kurchatov Institute", Moscow, Russia
e Ural Federal University named after the First President of Russia B. N. Yeltsin, Yekaterinburg, Russia

Abstract: Single crystals Ti$_{0.9}$Cr$_{0.1}$(Se$_{0.8}$S$_{0.2}$)$_2$ and Ti$_{0.85}$Cr$_{0.15}$(Se$_{0.8}$S$_{0.2}$)$_2$ were synthesized for the first time by gas-transport reactions. The structural and phase purity of the obtained single crystals was investigated by X-ray powder diffraction. The chemical composition of the synthesized samples was determined by energy dispersive X-ray spectroscopy on a scanning electron microscope. The electronic structure was studied by ARPES method. With increasing Cr concentration, a decrease in conduction band filling and a decrease in hole mass is observed. The absence of dispersion-free band is also observed, which indicates the absence of metal intercalation into the interlayer space.

Keywords: janus structures, angle-resolved photoemission spectroscopy, transition metal dichalcogenides.

Received: 19.04.2024
Revised: 16.10.2024
Accepted: 16.04.2024

DOI: 10.61011/FTP.2024.07.59179.6333H



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