RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 7, Pages 370–375 (Mi phts6766)

XXVIII International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, 11-15 March 2024

$\beta\Longleftrightarrow\beta'$ phase transition with temperature hysteresis in In$_2$Se$_3$ films

S. A. Ponomarevab, N. N. Kurusa, V. A. Golyashova, A. Yu. Mironova, D. I. Rogiloa, A. G. Milekhina, D. V. Shcheglova, A. V. Latyshevab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia

Abstract: The temperature dependences of Raman scattering for In$_2$Se$_3$ films were measured during cooling to the liquid nitrogen temperature and subsequent heating to the room temperature. The Raman spectra show a reversible $\beta$-In$_2$Se$_3\Longleftrightarrow \beta'$-In$_2$Se$_3$ phase transition with hysteresis in the range of 140–180 K previously discovered by a change in the atomic structure of the surface and the sharp decrease in electrical resistance by a factor of $\sim$10$^4$ during the cooling. The ARPES measurements display changes in film's band structure corresponding to this phase transition.

Keywords: phase transition, In$_2$Se$_3$, hysteresis, arpes, resistance, Raman scattering.

Received: 19.04.2024
Revised: 26.09.2024
Accepted: 26.09.2024

DOI: 10.61011/FTP.2024.07.59180.6335H



Bibliographic databases:


© Steklov Math. Inst. of RAS, 2025