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Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 8, Pages 434–442 (Mi phts6775)

Semiconductor structures, low-dimensional systems, quantum phenomena

Magnetotransport in HgTe quantum wells with two gate electrodes

G. M. Minkovab, O. E. Ruta, A. A. Sherstobitovab, A. V. Germanenkoa, S. A. Dvoretskiic, N. N. Mikhailovc

a Ural Federal University named after the First President of Russia B. N. Yeltsin, 620062 Ekaterinburg, Russia
b Institute of Metal Physics, Ural Branch of the Russian Academy of Sciences, 620108 Ekaterinburg, Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

Abstract: The magnetotransport properties of HgTe/Hg$_{1-x}$Cd$_x$Te quantum wells with a width of 32 and 46 nm in structures with two field electrodes were investigated. The analysis of the Shubnikov–de Haas oscillations, along with the analysis of intersubband magnetooscillations, allowed us to obtain information about the population of the spin branches of the electron spectrum split by spin-orbital interaction due to the asymmetry of the quantum well not only when the electron concentration changes, but also when the symmetry of the quantum well changes at a given electron concentration. The data obtained are interpreted using the results of the calculation of the energy spectrum performed within the framework of a self-consistent approach in a four-band $kP$-model. It is shown that taking into account the complexity of the spectrum of the studied systems is fundamentally important for the interpretation of experimental data.

Keywords: HgTe, quantum wells, magnetotransport, Shubnikov–de Haas oscillations

Received: 08.10.2024
Revised: 13.10.2024
Accepted: 13.10.2024

DOI: 10.61011/FTP.2024.08.59202.7175



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