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Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 10, Pages 529–532 (Mi phts6794)

International Conference Physics.SPb/2024, October 21-25, 2024, St. Petersburg

The influence of the chemical composition of the surrounding layers on the optical properties of InGaP(As) quantum dots

V. V. Andryushkina, I. I. Novikova, A. G. Gladysheva, A. V. Babicheva, V. N. Nevedomskiyb, D. S. Papyleva, E. S. Kolodeznyia, L. Ya. Karachinskya, A. Yu. Egorovc

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg, Russia
b Ioffe Institute, 194021 St. Petersburg, Russia
c Connector Optics LLC, 194292 St. Petersburg, Russia

Abstract: The results of a study of the effect of the location and chemical composition of InGaAs quantum wells in GaAs/AlGaAs/InGaP/InGaAs heterostructures on the optical properties of InGaP(As) quantum dots obtained by molecular beam epitaxy due to the substitution of phosphorus with arsenic in the InGaP layer during epitaxial growth are presented. It is shown that a blue shift of the quantum dots array photoluminescence maximum is observed using the InGaAs quantum well as a cap layer. Using of the InGaAs quantum well as the InGaP(As) quantum dots formation surface does not lead to the shift of the maximum photoluminescence spectrum wavelength. An increase of the InAs molar fraction in the InGaAs cap layer from 0.17 to 0.23 leads to a blue shift of the quantum dot array maximum photoluminescence spectrum by 108 nm.

Keywords: molecular-beam epitaxy, quantum dots, heterostructure, semiconductors.

Received: 02.05.2024
Revised: 30.07.2024
Accepted: 30.10.2024

DOI: 10.61011/FTP.2024.10.59373.6448A



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