The influence of the chemical composition of the surrounding layers on the optical properties of InGaP(As) quantum dots

The results of a study of the effect of the location and chemical composition of InGaAs quantum wells in GaAs/AlGaAs/InGaP/InGaAs heterostructures on the optical properties of InGaP(As) quantum dots obtained by molecular beam epitaxy due to the substitution of phosphorus with arsenic in the InGaP layer during epitaxial growth are presented. It is shown that a blue shift of the quantum dots array photoluminescence maximum is observed using the InGaAs quantum well as a cap layer. Using of the InGaAs quantum well as the InGaP(As) quantum dots formation surface does not lead to the shift of the maximum photoluminescence spectrum wavelength. An increase of the InAs molar fraction in the InGaAs cap layer from 0.17 to 0.23 leads to a blue shift of the quantum dot array maximum photoluminescence spectrum by 108 nm.