Study of the incorporation of group V atoms into arsenide-phosphide solid solutions grown by vapor-phase epitaxy using (CH$_3$)$_3$As an arsenic source

In this paper, we consider the prospects of using trimethylarsine as an alternative source of arsenic atoms in metal-organic vapor-phase epitaxy of arsenide-phosphide solid solutions. Using InAs$_y$P$_{1-y}$ as an example, we show that when using trimethylarsine, the arsenic concentration in the solid phase is less affected by fluctuations in the growth parameters (composition of the gas mixture) than when using a standard arsenic source – arsine.