G. V. Voznyuk, I. N. Grigorenko, A. S. Lila, M. I. Mitrofanov, A. V. Babichev, A. N. Smirnov, D. N. Nikolaev, S. O. Slipchenko, V. Yu. Davydov, A. F. Tsatsul'nikov, V. P. Evtikhiev, “Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As”, Fizika i Tekhnika Poluprovodnikov, 2024, Volume 58, Issue 10,Pages 552

International Conference Physics.SPb/2024, October 21-25, 2024, St. Petersburg

Micro-Raman spectroscopy study of radiation defects formed by Ga$^+$ focused ion beam in GaAs/Al$_{0.3}$Ga$_{0.7}$As

G. V. Voznyuk^a, I. N. Grigorenko^a, A. S. Lila^ab, M. I. Mitrofanov^a, A. V. Babichev^b, A. N. Smirnov^a, D. N. Nikolaev^a, S. O. Slipchenko^a, V. Yu. Davydov^a, A. F. Tsatsul'nikov^c, V. P. Evtikhiev^a

^a Ioffe Institute, 194021 St. Petersburg, Russia
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101 St. Petersburg, Russia
^c Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: Raman spectroscopy was used to investigate lithographic patterns formed by a focused Ga$^+$ ion beam in a GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The results showed that radiation defects accumulate during etching, with their concentration dependent on ion energy and dose. By optimizing etching and annealing conditions, it is possible to restore the crystal perfection of the heterostructure.

Keywords: micro-Raman spectroscopy, focused ion beam, radiation-induced defects, heterostructure.

Received: 03.05.2024
Revised: 31.07.2024
Accepted: 30.10.2024

DOI: 10.61011/FTP.2024.10.59379.6609A