Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier

The possibility of obtaining GaN-based heterostructures with composite InAlN/AlGaN barrier with a sheet resistance of $\sim$220–230 Ohm/sq. at room temperature by metalorganic vapor phase epitaxy, which is comparable to commercial structures with InAlN barriers, was experimentally demonstrated. Based on numerical calculations, it was shown that a significant reduction of the 2DEG mobility was due to alloy disorder potential scattering in the AlGaN layers.