Optimization of switching memristor structures based on HfO$_x$ using electron beam exposure

The electrophysical properties of memristors based on HfO$_x$ ($x\sim$ 1.8) irradiated with an electron beam in an area comparable in size to the cross-section of the filament are investigated. These properties are compared with memristors of a similar structure made without the use of local electron beam action on the hafnium oxide layer. It is shown that such an effect leads to a decrease in the amplitude and voltage variance of switching states of the memristor. Charge transport in both types of memristors has been studied, and the nature of the observed differences is discussed.