Influence of structured substrate surface properties on the GaAs planar nanowire morphology (Monte Carlo simulation)

This work is devoted to the Monte Carlo simulation of the self-catalyzed growth of GaAs planar nanowires according to the vapor–liquid–solid mechanism on GaAs substrates covered with a structured film-mask. A structured film-mask is defined as a layer with the silicon oxide properties and with geometry in the form of grooves of different depths, widths, and distances between them. The influence of the film-mask properties and the structured surface geometry on the GaAs planar nanowire morphology was analyzed. A range of flux intensities for stable GaAs planar nanowires growth at the chosen temperature was found. The conditions for transition from vapor-liquid-solid growth to selective growth (without a drop) of planar nanowire were found, which makes it possible to obtain defect-free nanowires along the groove.