Fluctuation analysis of the surface microrelief of silicon-on-insulator structures after radiation exposure

Using the method of two-dimensional fluctuation analysis, images of the surface of “silicon on insulator” structures were analyzed. It is found that the Hurst parameter of the non-irradiated surface was $H_0$ = 0.93, for $\gamma$-ray irradiation $H_\gamma$ = 0.71–0.87 and for neutron irradiation $H_n$ = 0.91–0.94. This indicates that non-power correlations of the height function and random walk type processes for all the samples studied. The influence of radiation on the change in the standarddeviation and correlation length of the microroughness of the surface of samples at the microscale and the degradation of charge carrier mobility at the macroscale are considered.