The influence of the procedure of iron doping of CVD-ZnSe using high-temperature diffusion on the composition and spatial distribution of impurity-defect centers

The spatial distribution of impurity-defect centers in CVD-ZnSe crystals formed after the procedure of doping these crystals with iron using high-temperature doping is investigated.The experiments were carried out using the method of two-photon confocal microscopy, which allows recording luminescence in the range of 0.44–0.73 $\mu$m with a spatial resolution of several $\mu$m. It is shown that as a result of this procedure, the crystal becomes significantly inhomogeneous not only in the doping zone. Regions hundreds of microns in size are formed in it adjacent to all its surfaces with a composition of intrinsic point defects and their complexes different from the main volume. It is found that the sizes of these regions depend on the doping time. Assumptions are made about the nature of complexes of intrinsic defects with residual impurities formed during doping and the mechanism of formation of the above regions.