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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2024 Volume 58, Issue 12, Pages 703–708 (Mi phts6824)

Semiconductor physics

A pulsed photoactivatable switch based on a semiconductor laser and an AlGaAs/GaAs high-voltage photodiode

A. A. Podoskin, I. V. Shushkanov, A. E. Rizaev, D. N. Nikolaev, S. O. Slipchenko, N. A. Pikhtin

Ioffe Institute, 194021 St. Petersburg, Russia

Abstract: An approach is proposed for generating short electrical pulses in a circuit with a payload, which can be semiconductor laser diodes. Within the framework of the proposed approach, a switch based on a high-voltage AlGaAs/GaAs photodiode was used to generate electrical pulses, and a high-power semiconductor laser operating in gain switching mode was used for its photoactivation with sub-ns transient times. Studies of the dynamics of photoactivated switches have shown their capability to produce voltage pulses, under an equivalent load of 50 ohms, with a peak amplitude of 19 V, a pulse width of 300 ps and a leading edge of 80 ps, which was observed when photoactivated by an optical pulse of a semiconductor laser with a peak power of 9.5 W, a leading edge of 35 ps and a pulse width of 100 ps.

Keywords: pulsed current switch, photoactivation, semiconductor laser.

Received: 23.10.2024
Revised: 07.11.2024
Accepted: 17.12.2024

DOI: 10.61011/FTP.2024.12.59831.7240



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