Metamorphic InGaAs photodiode with wavelength 1.55 $\mu$m, grown on GaAs substrate

The article presents the results of investigation of photodiodes for 1.55 $\mu$m wavelength, grown on GaAs substrates. InGaAs photodiode structures with InAlGaAs metamorphic buffer layer with quasi-root change of In concentration were grown by Metal Organic Chemical Vapor Deposition (MOCVD) has been developed. Photodiodes created based on the obtained structures had photosensitivity region up to 1.68 $\mu$m. The dark current density at reverse bias of -2 V was 3 $\cdot$ 10$^{-3}$ A/cm$^2$. The photosensitivity at wavelength of 1.55 $\mu$m was 0.6 A/W.