Initial stages of growth of the $\mathrm{GaN}(11\bar22)$

Scanning electron microscopy was used to study of the initial stages of the formation of a semipolar GaN(11$\bar2$2) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, on the surface of which U-shaped grooves with element sizes $<$ 100 nm (NP-Si(113)) were formed. It was found that NP-Si(113) substrates with a buffer AlN layer stimulate the formation of islands faceted by the planes $m$-GaN, $c$-GaN. It is shown that there is a predominant growth of the m-GaN facet in comparison with $c$-GaN.The experimental results correspond to the Gibbs–Curie–Wolff selection principle, but taking into account elastic stresses in the $c$-GaN plane.