On heating mechanisms in LEDs based on $p$-InAsSbP/$n$-InAs(Sb)

Three main reasons for a temperature increase in activated $p$-InAsSbP/$n$-InAs/$n$-InAsSbP and $p$-InAsSbP/$n$-InAsSb/$n$-InAs double heterostructures has been considered, contribution of nonradiative Auger recombination, electron-phonon interaction and Joule heating to diode temperature increase in single element LEDs and flip-chip diode arrays (1$\times$3) were evaluated at forward and reverse bias using data on spatial distribution of the mid-IR radiation intensity and current-voltage characteristics.