Impact of illumination on quantum lifetime in selectively doped GaAs single quantum wells with short-period AlAs/GaAs superlattice barriers

Impact of illumination on high-mobility dense 2D electron gas in selectively doped single $\mathrm{GaAs}$ quantum well with short-period $\mathrm{AlAs}/\mathrm{GaAs}$ superlattice barriers at $T = 4.2$ K in magnetic fields $B <2$ T has been studied. It was demonstrated that illumination at low temperatures gives rise to enhancement of electron density, mobility and quantum lifetime in studied heterostructures. The enhancement of quantum lifetime after illumination for single $\mathrm{GaAs}$ quantum well with modulated superlattice doping had been explained as consequence of decrease in effective concentration of remote ionized donors.