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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2023 Volume 57, Issue 3, Pages 215–220 (Mi phts6858)

Semiconductor physics

Model for speed performance of quantum-dot waveguide photodiode

A. E. Zhukova, N. V. Kryzhanovskayaa, I. S. Makhova, È. I. Moiseeva, A. M. Nadtochiya, N. A. Fominykha, S. A. Mintairovb, N. A. Kalyuzhnyyb, F. I. Zubovc, M. V. Maksimovc

a National Research University "Higher School of Economics", St. Petersburg Branch, 190008 St. Petersburg, Russia
b Ioffe Institute, 194021 St. Petersburg, Russia
c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, 194021 St. Petersburg, Russia

Abstract: A model is proposed that makes it possible to analytically analyze the speed performance of a waveguide $p$$i$$n$ photodiode with a light-absorbing region representing a multilayered array of quantum dots separated by undoped spacers. It is shown that there is an optimal number of layers of quantum dots, as well as an optimal thickness of the spacers, which provide the widest bandwidth. The possibility of achieving a frequency range (at the level of -3 dB) above 20 GHz for waveguide photodiodes based on InGaAs/GaAs quantum well-dots is shown.

Keywords: photodiode, quantum dots, speed.

Received: 06.04.2023
Revised: 04.05.2023
Accepted: 04.05.2023

DOI: 10.21883/FTP.2023.03.55632.4783



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