E. A. Artemov, A. V. Mantuzov, V. S. Zhurkin, A. D. Bozhko, O. S. Kudryavtsev, B. V. Andryushechkin, V. M. Shevlyuga, N. Yu. Shitsevalova, V. B. Filipov, V. V. Glushkov, “Peculiarities of surface structure and surface electron transport in correlated topological insulator SmB<nobr>$_6$</nobr>”, Fizika i Tekhnika Poluprovodnikov, 2023, Volume 57, Issue 4,Pages <nobr>232

XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Peculiarities of surface structure and surface electron transport in correlated topological insulator SmB$_6$

E. A. Artemov^ab, A. V. Mantuzov^ab, V. S. Zhurkin^a, A. D. Bozhko^a, O. S. Kudryavtsev^a, B. V. Andryushechkin^a, V. M. Shevlyuga^a, N. Yu. Shitsevalova^c, V. B. Filipov^c, V. V. Glushkov^a

^a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow, Russia
^b AEM Technologies LLC, 109651 Moscow, Russia
^c Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev, Ukraine

Abstract: New method of chemical-mechanical polishing (CMP) with compositions based on nanometer-sized amorphous silica particles has been developed for the treatment of the surface of single crystals of samarium hexaboride SmB$_6$. It is shown that the CMP method makes it possible to achieve surface roughness of the SmB$_6$ single crystals for a defect-free area with a root-mean-square profile deviation not exceeding 0.8 nm. The effect of the CMP method on the structural and electronic properties of the (100) and (110) surfaces of single-crystal SmB$_6$ samples is discussed.

Keywords: samarium hexaboride, chemical-mechanical polishing, surface conductivity, topological insulator.

Received: 05.05.2023
Revised: 29.06.2023
Accepted: 06.07.2023

DOI: 10.21883/FTP.2023.04.55891.02k