Temperature dependence of dislocation-related electroluminescence in silicon light-emitting diodes containing oxygen precipitates

Electroluminescence has been studied in silicon light-emitting diodes containing oxygen precipitates at temperatures of 40–300 K. Oxygen ion implantation and multistage anneals are used for fabrication of the diodes. Over all temperature range, spectra are well approximated by one Lorentz and four Gaussian curves. Lines of dislocation-related luminescence D1–D4 (the D1 line is described by Lorentz curve) and oxygen precipitates (OPs) are present in the spectra. At temperature variation, peak positions of the D1, OP and D2 lines coincide with temperature dependence of the forbidden gap width reduced by values of 356, 330 and 303 meV respectively. Build and quenching areas are observed on temperature dependences of the electroluminescence intensities of the D1, OP and D2 lines, the activation energies of the processes are determined, and reasons of their appearance are discussed.