Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers

We have studied superluminescent diodes with simplified design and active region based on 5 or 7 layers of InGaAs/GaAs quantum well-dots (QWDs). Emission peaks of the individual QWD layers are shifted with respect to each other by 15–35 nm to provide as wide as possible emission line in a superluminescent mode with central wavelength of about 1 $\mu$m without significant spectral dips. For superluminescent diodes with the active region based on 5 and 7 QWD layers, the maximal value of full width at half maximum of emission spectrum was 92 and 103 nm respectively.