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Fizika i Tekhnika Poluprovodnikov, 2023 Volume 57, Issue 6, Pages 421–425 (Mi phts6893)

XXVII International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, 13 - 16 March 2023

Two-frequency stimulated emission in Hg(Cd)Te/CdHgTe heterostructure

M. A. Fadeeva, A. A. Yantserab, A. A. Dubinovab, D. V. Kozlovab, V. V. Rumyantsevab, N. N. Mikhailovc, V. I. Gavrilenkoab, S. V. Morozovab

a Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia
b National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia

Abstract: In this work, we studied the spectra of stimulated emission of a waveguide heterostructure with quantum wells based on HgCdTe. In the course of the studies, we used optical pumping, at wavelengths of 2 and 2.3 $\mu$m, which are mainly absorbed, in the barriers and quantum wells, respectively. It was found that in both cases optical pumping leads to stimulated emission, with a wavelength corresponding to the energy of the fundamental transition in quantum wells, it being 138 meV. With pumping absorbed in barriers, it was found that a short-wavelength emission line with an energy of 248 meV appeared on the spectra, which can be attributed to transitions involving deep donor levels. At liquid nitrogen temperature, increasing the pumping intensity leads to the appearance of a narrow peak in the short-wave line and, by selecting the pumping parameters, two-frequency generation at 5 and 7 $\mu$m wavelengths can be achieved.

Keywords: narrow-gap semiconductors, HgCdTe, deep donors, stimulated emission.

Received: 24.08.2023
Revised: 01.09.2023
Accepted: 01.09.2023

DOI: 10.61011/FTP.2023.06.56468.31k



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