Luminescence characteristics of chromium-doped by high-temperature diffusion CVD–ZnSe

Using two-photon confocal microscopy in the spectral range of 0.44–0.73 $\mu$m, the spatial distribution of the luminescent characteristics of CVD–ZnSe doped with chromium using the HIP process was studied. It has been established that as a result of this process, four types of impurity-defect centers are formed in the crystal. It is shown that their formation involves point centers that form in the doping zone and diffuse deep into the crystal. Assumptions are made about the nature of these point centers.