Features of InP on Si nanowire growth

The possibility of InP nanowhiskers growth from the saturated phosphorus and indium vapors with V/III ratio of 8–10 in a quasi-closed volume on (111) oriented silicon substrates with a natural oxide layer 2–2.5 nm has been demonstrated. The growth of InP nanowhiskers from Au–In–P catalytic droplets formed during the initial period is reported. Optical studies confirmed the formation of InP nanostructures upon the Si surface. The nanostructures exhibit a high doping level presumably with tin atoms.