Selective area epitaxy of InP/GaInP$_2$ quantum dots from metal-organic compounds

Experiments on the growth of self-assembled InP/GaInP$_2$ quantum dots in dielectric mask 0.1–1 $\mu$m apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO$_2$ and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture.