Abstract:
The influence of an antimony sublayer (10 nm) on the structure and galvanomagnetic properties of thin films of a bismuth-antimony solid solution (3–12 at.% Sb) up to 1 $\mu$m thick has been studied. The films were produced on mica substrates by discrete vacuum evaporation and zone recrystallization. We found that the misorientation of the crystallite plane (111) increases relative to the film plane as well as the crystallite sizes decrease. The antimony underlayer does not change the crystallographic orientation during recrystallization and increases the film adhesion. The change in the galvanomagnetic coefficients when using a sublayer is due to the classical dimensional effect and increasing plane deformation.